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MOSFET N-CHAN ENHNCMNT MODE DMN4800LSS-13
MOSFET N-CHAN ENHNCMNT MODE DMN4800LSS-13
MOSFET N-CHAN ENHNCMNT MODE DMN4800LSS-13
Kωδικός 000170
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MOSFET N-CHAN ENHNCMNT MODE DMN4800LSS-13 

Manufacturer:Diodes Incorporated

Product Category:MOSFET

RoHS: Details

Brand:Diodes Incorporated

Mounting Style:SMD/SMT

Package/Case:SO-8

Number of Channels:1 Channel

Transistor Polarity:N-Channel

Vds - Drain-Source Breakdown Voltage:30 V

Id - Continuous Drain Current:8.6 A

Rds On - Drain-Source Resistance:20 mOhms

Vgs - Gate-Source Voltage:25 V

Maximum Operating Temperature:+ 150 C

Packaging:Reel

Channel Mode:Enhancement

Configuration:Single Quad Drain Triple Source

Fall Time:4.5 ns

Minimum Operating Temperature:- 55 C

PackagingOptionsScrubbed:DMN4800LSS

Pd - Power Dissipation:1.46 W

Rise Time:4.5 ns

Series:DMN48

Factory Pack Quantity:2500

Transistor Type:1 N-Channel

Typical Turn-Off Delay Time:26.33 ns

Typical Turn-On Delay Time:5.03 ns

Unit Weight:74 mg

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