MOSFET INFINEON IR 55V 1 N-CH HEXFET 14.5mOhms 29nC IRFR2905ZTRPBF

Manufacturer: Infineon
Product Category: MOSFET
RoHS:  Details
 
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 59 A
Rds On - Drain-Source Resistance: 14.5 mOhms
Vgs - Gate-Source Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 29 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 110 W
Configuration: Single
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: MouseReel
Packaging: Reel
Height: 2.3 mm
 
Length: 6.5 mm
 
Transistor Type: 1 N-Channel
 
Width: 6.22 mm
 
Brand: Infineon / IR
 
Forward Transconductance - Min: 20 S
 
Fall Time: 35 ns
 
Product Type: MOSFET
 
Rise Time: 66 ns